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Technologist Engineer, MRAM Device Physics

Location: San Jose, CA, United States 
Req ID: JR-0000026534

Description

Western Digital Research is seeking an individual to play a lead role in the study and development of emerging non-volatile memory.  The individual will work as part of the eNVM research team whose goal is to develop building blocks and to provide insights into commercially useful eNVM technologies, such as MRAM, RRAM, and PCM. The main responsibility of this role is to provide project guidance through the acquisition and analysis of electronic measurement data on MRAM devices. As part of the role, the individual will define the device characterization strategy, carry out measurements, and develop test infrastructure, as needed. The work will entail close collaboration with the nanofabrication, materials, and architecture teams.

 

Required Qualifications
  • Ph.D. in physics, applied physics, electrical engineering, or related field
  • Expertise in device test electronics, methods, and analysis
  • Excellent team collaboration and communication skills
  • Strong programming/scripting experience
  • Proven ability to initiate and complete scientific studies
Desired Qualifications
  • Experience with CMOS array testing
  • Expertise in statistical analysis methods and experimental design
  • Strong history of publications and/or patents