Perform chip-level failure analysis to determine root for memory devices either from FAB, reliability testing, or customer returns and provide a written report containing data and physical evidence to support the root cause conclusion to the requester so that corrective action(s) can be taken.
Chip-level failure analysis to determine root cause for memory devices from FAB, reliability testing, or customer returns and recommending corrective action. FA consists of:
1) Isolating the failure using electrical characterization using benchtop test equipment, which may involve circuit-edit FIB and microprobing.
2) Physically deprocessing the sample using lapping, etching, or cross-sectioning, and
3) SEM or STEM (and elemental analysis, if necessary) to understand the root cause.
4) Providing clear, concise written reports with conclusions supported by data and physical evidence such as SEM and/or STEM images.
The failure analysis candidate will also work to develop failure analysis methodology for new failure modes.
1) Requires at least BS degree in Electrical Engineering, Material Science, or Chemical Engineering with 2-5 or more years of related experience.
2) An understanding of MOS devices and processes used in memory chip fabrication.
3) Experience with electrical measurement on the chip level, including microprobing to isolate and characterize on-chip faults.
4) Experience with FA tools such as OBIRCH, photoemission, SEM, polisher, chemical etching.
5) Familiar with circuit schematics and layout.
6) Understanding of memory product operation.
The ideal candidate must have the proven ability to:
1) Perform chip level failure analysis to determine root cause for memory devices submitted by FAB or customer return and recommend corrective action.
2) Develop failure analysis methodology for new failure modes.
3) Multi-task and meet deadlines.
4) Have good communication skills (verbal and written) and interpersonal skills.