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Device engineer in Ofuna/JPN

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Location: Yokohama, 14, Japan 
Req ID: JR-0000038196


The mission is technology and product development of  “raw NAND device”. This involves mainly electrical measurement and analysis of memory cell characteristics to optimize design, process, memory cell and CMOS device, especially focusing on memory cell operation, reliability and performance. The results will be fedback to fab process, wafer testing, circuit design etc. Will closely collaborate with Yokkaichi (fab), US product team and Toshiba.